深圳市尚想信息技术有限公司

EU RoHSCompliant with Exemption ECCN (US)EAR99Part StatusActiveHTS8541.29.00.95Product CategoryPower MOSFETConfigurationSingle Quad Drain Triple SourceChannel ModeEnhancementChannel TypePNumber of Elements per Chip1Maximum Drain Source Voltage (V)60Maximum Gate Source Voltage (V)±20Maximum Continuous Drain Current (A)5.7Maximum Drain Source Resistance (mOhm)52@10VTypical Gate Charge @ Vgs (nC)25@10V|14@4.5V  EU RoHSCompliant with Exemption ECCN (US)EAR99Part StatusActiveHTS8541.29.00.95Product CategoryPower MOSFETConfigurationSingle Quad Drain Triple SourceChannel ModeEnhancementChannel TypePNumber of Elements per Chip1Maximum Drain Source Voltage (V)60Maximum Gate Source Voltage (V)±20Maximum Continuous Drain Current (A)5.7Maximum Drain Source Resistance (mOhm)52@10VTypical Gate Charge @ Vgs (nC)25@10V|14@4.5VTypical Gate Charge @ 10V (nC)25Typical Input Capacitance @ Vds (pF)1258@30VMaximum Power Dissipation (mW)3200Typical Fall Time (ns)37Typical Rise Time (ns)58Typical Turn-Off Delay Time (ns)30Typical Turn-On Delay Time (ns)15Minimum Operating Temperature (°C)-55Maximum Operating Temperature (°C)150PackagingTape and Reel