100 V, 60 A, 8 m
General Description
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH® process that has been especially
tailored to minimize the on−state resistance and yet maintain superior
switching performance.
Features
• Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A
• Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 A
• Advanced Package and Silicon combination for low rDS(on) and high
efficiency
• MSL1 robust package design
• 100% UIL tested
• 100% Rg tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC−DC Conversion
询价
