KSP44 / KSP45
NPN Epitaxial Silicon Transistor
Features
• High-Voltage Transistor
• Collector-Emitter Voltage: VCEO = KSP44: 400 V
KSP45: 350 V
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
KSP44BU KSP44 TO-92 3L Bulk
KSP44TA KSP44 TO-92 3L Ammo
KSP44TF KSP44 TO-92 3L Tape and Reel
KSP45TA KSP45 TO-92 3L Ammo
Symbol Parameter Value Unit VCBO Collector-Base Voltage
KSP44 500
V
KSP45 400
VCEO Collector-Emitter Voltage
KSP44 400
V
KSP45 350
VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C