NTTFS5C453NLTAG ON 安森美 DFN8 进口 晶体管 MOSFET T6 40V NCH LL IN U8FL
产品信息
Power MOSFET
40 V, 3 m, 107 A, Single N−Channel
Features
• Small Footprint (3.3x3.3 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 40 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RJC
(Notes 1, 3) Steady
State
TC = 25°C ID 107 A
TC = 100°C 75
Power Dissipation
RJC (Note 1)
TC = 25°C PD 68 W
TC = 100°C 34
Continuous Drain
Current RJA
(Notes 1, 2, 3) Steady
State
TA = 25°C ID 23 A
TA = 100°C 16
Power Dissipation
RJA (Notes 1 & 2)
TA = 25°C PD 3.3 W
TA = 100°C 1.6
Pulsed Drain Current TA = 25°C, tp = 10 s IDM 740 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+175
°C
Source Current (Body Diode) IS 76 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 7 A)
EAS 215 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
询价
