Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 900 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 9
Drain current
Pulse (Note 1) IDP 27
A
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy
(Note 2) EAS 778 mJ
Avalanche current IAR 9 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
询价
